Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS4041PZ,115

PBSS4041PZ,115

Nexperia

TRANS PNP 60V 5.7A SOT223

29401

PBSS5220T,215

PBSS5220T,215

Nexperia

TRANS PNP 20V 2A TO236AB

466

NXP3875GR

NXP3875GR

Nexperia

TRANS NPN 50V 0.15A TO-236AB

0

BCX71H,215

BCX71H,215

Nexperia

TRANS PNP 45V 100MA TO236AB

4100

BF570,215

BF570,215

Nexperia

TRANS NPN 15V 100MA TO236AB

2707

BCX52-16,115

BCX52-16,115

Nexperia

TRANS PNP 60V 1A SOT89

4349

2PB709BRL,215

2PB709BRL,215

Nexperia

TRANS PNP 50V 200MA TO236AB

0

BCP53HX

BCP53HX

Nexperia

TRANS PNP 80V 1A SOT223

2

PBSS4120T,215

PBSS4120T,215

Nexperia

TRANS NPN 20V 1A TO236AB

403

PBSS5330PA,115

PBSS5330PA,115

Nexperia

TRANS PNP 30V 3A 3HUSON

0

PBHV9115TVL

PBHV9115TVL

Nexperia

PBHV9115T/SOT23/TO-236AB

0

PBSS8510PA,115

PBSS8510PA,115

Nexperia

TRANS NPN 100V 5.2A SOT1061

0

PBSS5140T,215

PBSS5140T,215

Nexperia

TRANS PNP 40V 1A TO236AB

7763

BC857CM,315

BC857CM,315

Nexperia

BC857 - PNP GENERAL PURPOSE TRAN

0

2PA1774QM,315

2PA1774QM,315

Nexperia

TRANS PNP 40V 100MA DFN1006-3

0

BC816-25WF

BC816-25WF

Nexperia

BC816-25W/SOT323/SC-70

39600

BCP51-16,115

BCP51-16,115

Nexperia

TRANS PNP 45V 1A SOT223

0

BC847BW,115

BC847BW,115

Nexperia

TRANS NPN 45V 100MA SOT323

76010

PBSS303ND,115

PBSS303ND,115

Nexperia

TRANS NPN 60V 1A 6TSOP

4203

BC817W,115

BC817W,115

Nexperia

TRANS NPN 45V 500MA SOT323

14013

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top