Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PHPT60406NYX

PHPT60406NYX

Nexperia

TRANS NPN 40V 6A LFPAK56

2762

PBHV9540Z,115

PBHV9540Z,115

Nexperia

TRANS PNP 400V 0.5A SOT223

752

PBHV8560ZX

PBHV8560ZX

Nexperia

IC TRANS NPN 600V 0.5A SOT223

1014

BF722,115

BF722,115

Nexperia

NOW NEXPERIA BF722 - SMALL SIGNA

33066

BCW60B,215

BCW60B,215

Nexperia

TRANS NPN 32V 100MA TO236AB

4695

BF820,215

BF820,215

Nexperia

TRANS NPN 300V 50MA TO236AB

5492

BC860CW,135

BC860CW,135

Nexperia

TRANS PNP 45V 0.1A SOT323

0

BCW61C,235

BCW61C,235

Nexperia

NOW NEXPERIA BCW61C - SMALL SIGN

20000

PBSS5250X,135

PBSS5250X,135

Nexperia

TRANS PNP 50V 2A SOT89

2271

BC53-10PA,115

BC53-10PA,115

Nexperia

NOW NEXPERIA BC53-10PA - SMALL S

75000

PMBT2907,215

PMBT2907,215

Nexperia

TRANS PNP 40V 600MA TO236AB

23982

PXT4401,115

PXT4401,115

Nexperia

TRANS NPN 40V 600MA SOT89

2260

NXP3875YR

NXP3875YR

Nexperia

TRANS NPN 50V 0.15A TO-236AB

0

BC806-16VL

BC806-16VL

Nexperia

BC806-16/SOT23/TO-236AB

6696

PHPT60610PYX

PHPT60610PYX

Nexperia

PHPT60610PY - 60 V, 10A PNP HIGH

76500

PBHV9215Z,115

PBHV9215Z,115

Nexperia

TRANS PNP 150V 2A SOT223

983

BC859CW,115

BC859CW,115

Nexperia

TRANS PNP 30V 100MA SOT323

371

BCP53-10T,115

BCP53-10T,115

Nexperia

POWER BIPOLAR TRANSISTOR

25000

BC847,215

BC847,215

Nexperia

TRANS NPN 45V 100MA TO236AB

124982

BCX55-16,135

BCX55-16,135

Nexperia

TRANS NPN 60V 1A SOT89

5555

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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