Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2PC4617RM,315

2PC4617RM,315

Nexperia

TRANSISTORS>100MHZ

743585

PBHV8118T,215

PBHV8118T,215

Nexperia

TRANS NPN 180V 1A SOT23

15728

BC807W,115

BC807W,115

Nexperia

TRANS PNP 45V 0.5A SOT323

1771

PMBTA92,235

PMBTA92,235

Nexperia

TRANS PNP 300V 0.1A SOT23

0

BCM847BS/ZL115

BCM847BS/ZL115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

81000

PBSS4350T,215

PBSS4350T,215

Nexperia

TRANS NPN 50V 2A SOT23

1435

PBSS5240ZF

PBSS5240ZF

Nexperia

NOW NEXPERIA PBSS5240ZF - SMALL

5625

BCX70K,235

BCX70K,235

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

10000

PBSS4320X,135

PBSS4320X,135

Nexperia

TRANS NPN 20V 3A SOT89

23789

PMV130ENEA,215

PMV130ENEA,215

Nexperia

SMALL SIGNAL FIELD-EFFECT TRANSI

0

PBSS302PD,115

PBSS302PD,115

Nexperia

TRANS PNP 40V 4A 6TSOP

0

PBSS5130QAZ

PBSS5130QAZ

Nexperia

TRANS PNP 30V 1A DFN1010D-3

9190

BCP56,115

BCP56,115

Nexperia

TRANS NPN 80V 1A SOT223

24

BCW60C,235

BCW60C,235

Nexperia

TRANS NPN 32V 0.1A SOT23

0

PBSS5330PA,135

PBSS5330PA,135

Nexperia

TRANS PNP 30V 3A HUSON3

0

BSP51,115

BSP51,115

Nexperia

TRANS NPN DARL 60V 1A SOT223

1474

MJD45H11J

MJD45H11J

Nexperia

MJD45H11/SOT428/DPAK

4048

PBSS5520X,135

PBSS5520X,135

Nexperia

TRANS PNP 20V 5A SOT89

3096

BC816-25VL

BC816-25VL

Nexperia

BC816-25/SOT23/TO-236AB

9880

PBSS2540MB,315

PBSS2540MB,315

Nexperia

TRANS NPN 40V 0.5A 3DFN

6911

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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