Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847BM,315

BC847BM,315

Nexperia

TRANS NPN 45V 100MA DFN1006-3

0

BC846BM,315

BC846BM,315

Nexperia

TRANS NPN 65V 0.1A 3DFN

1716

PBSS5560PA,115

PBSS5560PA,115

Nexperia

TRANS PNP 60V 5A 3HUSON

0

BCP53TX

BCP53TX

Nexperia

TRANS PNP 80V 1A SOT223

0

BCX56-10,115

BCX56-10,115

Nexperia

TRANS NPN 80V 1A SOT89

2

BCP69,115

BCP69,115

Nexperia

TRANS PNP 20V 1A SOT223

0

2PB710ASL,215

2PB710ASL,215

Nexperia

TRANS PNP 50V 0.5A SOT-23

0

PBSS305NZ,135

PBSS305NZ,135

Nexperia

TRANS NPN 80V 5.1A SOT223

6951

BCX56-16TX

BCX56-16TX

Nexperia

BCX56-16T/SOT89/MPT3

472

PHPT61002PYCLHX

PHPT61002PYCLHX

Nexperia

TRANS PNP 100V 2A LFPAK56 PWRSO8

988

BC850BW,115

BC850BW,115

Nexperia

TRANS NPN 45V 100MA SOT323

11970

BC816-16WF

BC816-16WF

Nexperia

BC816-16W/SOT323/SC-70

10000

PMST2222A,115

PMST2222A,115

Nexperia

TRANS NPN 40V 600MA SOT323

31570

PMBT3904,235

PMBT3904,235

Nexperia

TRANS NPN 40V 200MA TO236AB

5578

BCW31,215

BCW31,215

Nexperia

TRANS NPN 32V 100MA TO236AB

14146

BC807-25LWX

BC807-25LWX

Nexperia

TRANS PNP 45V 0.5A SOT323

0

BC807-40QBZ

BC807-40QBZ

Nexperia

BC807-40QB/SOT8015/DFN1110D-3

0

BC847CW,115

BC847CW,115

Nexperia

TRANS NPN 45V 100MA SOT323

275706

BC868-25,115

BC868-25,115

Nexperia

TRANS NPN 20V 2A SOT89

17939

BCX70J,235

BCX70J,235

Nexperia

TRANS NPN 45V 100MA TO236AB

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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