Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS5330X,115

PBSS5330X,115

Nexperia

TRANS PNP 30V 3A SOT89

1619

BC847B,235

BC847B,235

Nexperia

TRANS NPN 45V 100MA TO236AB

11538

BSR30F

BSR30F

Nexperia

BSR30/SOT89/MPT3

0

BCW60C,215

BCW60C,215

Nexperia

TRANS NPN 32V 100MA TO236AB

2634

BCW61D,215

BCW61D,215

Nexperia

TRANS PNP 32V 100MA TO236AB

17105

BCW61B,215

BCW61B,215

Nexperia

TRANS PNP 32V 100MA TO236AB

23

BCX71J,235

BCX71J,235

Nexperia

TRANS PNP 45V 100MA TO236AB

0

PBSS9110D,115

PBSS9110D,115

Nexperia

TRANS PNP 100V 1A 6TSOP

5427

PMBT2222AMYL

PMBT2222AMYL

Nexperia

PMBT2222AM/SOT883/XQFN3

6050

BC817-40W,115

BC817-40W,115

Nexperia

TRANS NPN 45V 0.5A SOT323

13129

PMSTA05,115

PMSTA05,115

Nexperia

TRANS NPN 60V 500MA SOT323

0

BSP41,115

BSP41,115

Nexperia

TRANS NPN 60V 1A SOT223

8

BC807-25QCZ

BC807-25QCZ

Nexperia

BC807-25QC/SOT8009/DFN1412D-3

0

BC847AQAZ

BC847AQAZ

Nexperia

TRANS NPN 45V 0.1A SOT1215

91

BC857C,235

BC857C,235

Nexperia

TRANS PNP 45V 0.1A SOT23

9607

PMSTA56,115

PMSTA56,115

Nexperia

TRANS PNP 80V 500MA SOT323

0

PBSS9410PA,115

PBSS9410PA,115

Nexperia

TRANS PNP 100V 2.7A 3HUSON

1490

PMSS3906,115

PMSS3906,115

Nexperia

TRANS PNP 40V 100MA SOT323

622

BCV48,115

BCV48,115

Nexperia

TRANS PNP DARL 60V 0.5A SOT89

0

BC807-16HVL

BC807-16HVL

Nexperia

BC807-16H/SOT23/TO-236AB

9880

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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