Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PXTA14,115

PXTA14,115

Nexperia

TRANS NPN DARL 30V 500MA SOT89

1615

BC857W,115

BC857W,115

Nexperia

TRANS PNP 45V 0.1A SOT323

2665

PBSS4350X,147

PBSS4350X,147

Nexperia

TRANS NPN 50V 3A SOT89

1540

PBSS302PX,115

PBSS302PX,115

Nexperia

TRANS PNP 20V 5.1A SOT89

660

BC806-25WX

BC806-25WX

Nexperia

BC806-25W/SOT323/SC-70

3000

PBSS4480X,135

PBSS4480X,135

Nexperia

TRANS NPN 80V 4A SOT89

1866

BC816-16HVL

BC816-16HVL

Nexperia

BC816-16H/SOT23/TO-236AB

9375

BCX17,235

BCX17,235

Nexperia

TRANS PNP 45V 500MA TO236AB

2880

BC859CW,135

BC859CW,135

Nexperia

TRANS PNP 30V 0.1A SOT323

0

BC51PA,115

BC51PA,115

Nexperia

TRANS PNP 45V 1A 3HUSON

779

PBSS4032NZ,115

PBSS4032NZ,115

Nexperia

TRANS NPN 30V 4.9A SOT223

1024

PHPT60603NY,115

PHPT60603NY,115

Nexperia

POWER BIPOLAR TRANSISTOR

348241

BC859C,235

BC859C,235

Nexperia

TRANS PNP 30V 0.1A SOT23

0

BST60,115

BST60,115

Nexperia

TRANS PNP DARL 45V 1A SOT89

1765

MMBT3906VL

MMBT3906VL

Nexperia

MMBT3906/SOT23/TO-236AB

0

BC807K-40R

BC807K-40R

Nexperia

BC807K-40/SOT23/TO-236AB

0

BC816-25WX

BC816-25WX

Nexperia

BC816-25W/SOT323/SC-70

0

BC807-40W,115

BC807-40W,115

Nexperia

TRANS PNP 45V 500MA SOT323

68213

PMBT2907A,235

PMBT2907A,235

Nexperia

TRANS PNP 60V 600MA TO236AB

9579

PBSS4041NZ,115

PBSS4041NZ,115

Nexperia

TRANS NPN 60V 7A SOT223

928

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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