Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SB1203T-TL-E

2SB1203T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 5A TP-FA

17055600

2N3055G

2N3055G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 15A TO204

391

MJD50G

MJD50G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 1A DPAK

70

TIP32CG

TIP32CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A TO220AB

34

2SA2039-E

2SA2039-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 5A TP

6364000

MJE172G

MJE172G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 3A TO225AA

398

BD442G

BD442G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 4A TO-225AA

173

2SB1201S-E

2SB1201S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A TP-FA

2341

2N6045G

2N6045G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A TO220AB

6665000

SBCP53-10T1G

SBCP53-10T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT223-3

51610000

BC33725BU

BC33725BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA TO92-3

663810000

SMMBT5551LT1G

SMMBT5551LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 600MA SOT23-3

96003

MJE702G

MJE702G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 4A TO225AA

17974000

NJVMJD44H11G

NJVMJD44H11G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 8A DPAK

1175

MMBT3904WT1G

MMBT3904WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SC70-3

0

TIP29CG

TIP29CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 1A TO220AB

2266

MJD31C1G

MJD31C1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A IPAK

3669300

SBC857BLT1G

SBC857BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SOT23-3

2147483647

NSS12201LT1G

NSS12201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 12V 2A SOT23-3

2912

NSS60601MZ4T3G

NSS60601MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 6A SOT-223

783

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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