Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PZTA14

PZTA14

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 1.2A SOT223

409044000

NSVMMBT5087LT1G

NSVMMBT5087LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 50MA SOT23-3

1973

2SB1202T-TL-E

2SB1202T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A TPFA

24663500

BC848BLT1G

BC848BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23-3

2681

SMMBTA42LT3G

SMMBTA42LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA SOT23-3

4442

FJE5304DTU

FJE5304DTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 4A TO126-3

0

2N3772G

2N3772G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 20A TO204

0

NSS1C201LT1G

NSS1C201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A SOT23-3

8346

BDX33BG

BDX33BG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 10A TO220AB

252850

SBC807-25WT1G

SBC807-25WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.5A SC-70

11145

CPH6123-TL-E

CPH6123-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A 6CPH

1081

2N2222

2N2222

Sanyo Semiconductor/ON Semiconductor

DIE TRANS NPN MED PWR GEN PURP

0

MJH11019G

MJH11019G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 200V 15A TO247

740

MJ21193G

MJ21193G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO204

157221000

SMMBTA56WT1G

SMMBTA56WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 0.5A SC70-3

7949

MMBT4126LT3G

MMBT4126LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 200MA SOT23-3

3367

MJD50RLG

MJD50RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 1A DPAK

0

BC549CTA

BC549CTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

614822000

NJVMJD31CT4G-VF01

NJVMJD31CT4G-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A DPAK

0

KSH42CTF

KSH42CTF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A DPAK

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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