Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NSS12501UW3T2G

NSS12501UW3T2G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 12V 5A 3-WDFN

2978

2SD1805G-E

2SD1805G-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 5A TP

5677000

MMBT6520LT1G

MMBT6520LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 350V 500MA SOT23-3

17415

NSVBC856BM3T5G

NSVBC856BM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 0.1A SOT-723

0

NJVMJB42CT4G

NJVMJB42CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A D2PAK-3

132

2N3904TF

2N3904TF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA TO92-3

0

S2SC4617G

S2SC4617G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 100MA SC75 SOT416

0

2N5191G

2N5191G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 4A TO225AA

190634000

TIP111G

TIP111G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 2A TO-220AB

733

PN2907ATA

PN2907ATA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 800MA TO92-3

1338

2SA1593S-E

2SA1593S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A TP

373

SPZT751T1G

SPZT751T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 2A SOT223

1415

KSD1616AYTA

KSD1616AYTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 1A TO92-3

0

2SA1418S-TD-E

2SA1418S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 700MA PCP

15508000

2N5038G

2N5038G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 90V 20A TO204

4481500

NJV4030PT3G

NJV4030PT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 3A SOT223

0

2SD1803S-E

2SD1803S-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TP

43114000

NSL12AWT1G

NSL12AWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 2A SC88/SC70-6

44

SBCP53-16T1G

SBCP53-16T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

15205

SMMBT2222ALT1G

SMMBT2222ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT23-3

1316

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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