Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMBT4401WT1G

MMBT4401WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SC70-3

1016

2N6388G

2N6388G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 10A TO220AB

247

2SA2126-H

2SA2126-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A TP

119216500

BD676G

BD676G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 45V 4A TO225AA

14963000

MJ11022G

MJ11022G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 250V 15A TO204

552100

SBSP52T1G

SBSP52T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 1A SOT223

370

PZT651T1G

PZT651T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 2A SOT223

3821

NSS1C201MZ4T1G

NSS1C201MZ4T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A SOT223-4

3000

BD810G

BD810G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 10A TO-220AB

3512350

SBC846ALT1G

SBC846ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SOT23-3

1232

SMMBT2907ALT1G

SMMBT2907ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA SOT23-3

8548

SMMBT2222AWT1G

SMMBT2222AWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 0.6A SOT323

6569

FJA4310OTU

FJA4310OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 140V 10A TO3P

9785400

2SC3649T-TD-H

2SC3649T-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A PCP

2147483647

FSB649

FSB649

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 3A SUPERSOT3

566

MMBT6427LT1G

MMBT6427LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 40V 500MA SOT23-3

1088

KSP44TF

KSP44TF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 300MA TO92-3

0

BC550CTA

BC550CTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

0

BC849CLT1G

BC849CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23-3

58128

MJE15029G

MJE15029G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 8A TO220AB

3348600

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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