Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJF6388G

MJF6388G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 10A TO220FP

0

2SD1803S-H

2SD1803S-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TP

149116000

BC857CWT1G

BC857CWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SC70-3

5165

KSD2012GTU

KSD2012GTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A TO-220F

1630

KSP44BU

KSP44BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 300MA TO92-3

1739

BCP56-16T3G

BCP56-16T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT-223

13679

NJVMJB41CT4G

NJVMJB41CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A D2PAK-3

211712800

2SC6097-E

2SC6097-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A TP

1464

2SB1215S-E

2SB1215S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A TP

279

PN100A

PN100A

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.5A TO-92

0

TIP105TU

TIP105TU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 60V 8A TO220-3

8925000

BC556ATA

BC556ATA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 100MA TO92-3

1955

2SC5706-TL-E

2SC5706-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TPFA

12028700

SMMBTA92LT3G

SMMBTA92LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 0.5A SOT-23

0

MJ21196G

MJ21196G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 16A TO204

238

BC807-40WT1G

BC807-40WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SC70-3

2612

BC517-D74Z

BC517-D74Z

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 1.2A TO-92

0

2SD1803T-TL-E

2SD1803T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TPFA

125416800

SBC857BWT1G

SBC857BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.1A SOT-323

9895

2SB1203S-TL-E

2SB1203S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 5A TP-FA

1372

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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