Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP53-16T3G

BCP53-16T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

20850

NSS40200LT1G

NSS40200LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 2A SOT23-3

1405

KSC2334YTU

KSC2334YTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 7A TO-220

3824

MJE5731AG

MJE5731AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 375V 1A TO220AB

800600

NSV1C301ET4G

NSV1C301ET4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A 3DPAK

0

KSB546YTU

KSB546YTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 2A TO220-3

100013000

NSVMMBT5401LT3G

NSVMMBT5401LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 500MA SOT23-3

4026

CPH3216-TL-E

CPH3216-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 1A 3CPH

32

2SA1419S-TD-E

2SA1419S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A SOT89-3

1850

MJB44H11G

MJB44H11G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 10A D2PAK

126

FJL4315OTU

FJL4315OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 17A TO264-3

5161500

2N5401YTA

2N5401YTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 600MA TO92-3

0

MMBT3904TT1G

MMBT3904TT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SC75 SOT416

0

BC559BTA

BC559BTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 100MA TO92-3

4571

MJD3055T4G

MJD3055T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 10A DPAK

9267

MJF18008G

MJF18008G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 8A TO220FP

59

2SA1417T-TD-E

2SA1417T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A SOT89-3

1199

MJL3281AG

MJL3281AG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 260V 15A TO264

0

2N6487G

2N6487G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 15A TO-220AB

392

NSVMMBT5401M3T5G

NSVMMBT5401M3T5G

Sanyo Semiconductor/ON Semiconductor

PNP TRANSISTOR 150V

2147483647

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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