Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
CPH3245-TL-E

CPH3245-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 2A 3CPH

132012000

NSS20500UW3T2G

NSS20500UW3T2G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 20V 5A 3-WDFN

2805

SPZTA42T1G

SPZTA42T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA SOT223-3

26728

MJD3055RLG

MJD3055RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 10A DPAK

3600

FJD5304DTF

FJD5304DTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 4A DPAK

6690

2SA1416S-TD-E

2SA1416S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 1A PCP

240610000

BD180G

BD180G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1A TO225AA

15887000

MMBT3906LT3G

MMBT3906LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 200MA SOT23-3

16599

MJF122G

MJF122G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 5A TO220FP

1273

BCW72LT1G

BCW72LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

4589

NSVBC857CWT1G

NSVBC857CWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.1A SOT-323

810796000

MPSA05RA

MPSA05RA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 500MA TO92-3

0

2SD1803T-E

2SD1803T-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TP

427

MJL1302AG

MJL1302AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 260V 15A TO264

0

PN2907ATFR

PN2907ATFR

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 800MA TO92-3

0

2SC6095-TD-E

2SC6095-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 2.5A PCP

3087

MJD112RLG

MJD112RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 2A DPAK

135

2SA1593T-TL-E

2SA1593T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A TP-FA

9553500

NJW3281G

NJW3281G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 15A TO-3P

45469240

NJVMJD47T4G

NJVMJD47T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 1A DPAK-4

1756

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top