Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
SMMBT2907ALT3G

SMMBT2907ALT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA SOT23-3

32048

TIP47G

TIP47G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 1A TO220AB

349

NSVBCW32LT1G

NSVBCW32LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 32V 0.1A SOT23

0

BC817-40LT1G

BC817-40LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

147670

MMBTA06LT1G

MMBTA06LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 500MA SOT23-3

0

BCP53-16T1G

BCP53-16T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT223

2147483647

BC817-40WT1G

BC817-40WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SC70-3

258

MSC2712GT1G

MSC2712GT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 100MA SC59

2147483647

SMMBTA56LT1G

SMMBTA56LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 500MA SOT23-3

4649000

NSS12100UW3TCG

NSS12100UW3TCG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 1A 3WDFN

2147483647

2SC5566-TD-E

2SC5566-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 4A PCP

0

PZTA28

PZTA28

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 0.8A SOT223

13956

2SD1815S-E

2SD1815S-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A TP

1583

2N5657G

2N5657G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 350V 500MA TO225AA

14976000

MJD128T4G

MJD128T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 120V 8A DPAK

80522500

BC546BTA

BC546BTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA TO92-3

0

2SC6144SG

2SC6144SG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 10A TO220F-3FS

197

NZT902

NZT902

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 90V 3A SOT-223

1991

MMBT2222AM3T5G

MMBT2222AM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT723

0

NST847BF3T5G

NST847BF3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT1123

5902

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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