Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N6287G

2N6287G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 20A TO-3

282200

FJPF13007H2TU

FJPF13007H2TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 8A TO220F

1712000

NSVBC817-40WT1G

NSVBC817-40WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN GP 45V 500MA SC70-3

1667

2SC6082-EPN-1E

2SC6082-EPN-1E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 15A

155

BCW71

BCW71

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

8819

MJH11021G

MJH11021G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 250V 15A TO247

0

SMMBT2369LT1G

SMMBT2369LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 0.2A SOT23

0

KSP13BU

KSP13BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 0.5A TO-92

0

SBC807-16LT1G

SBC807-16LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

18953

TIP31BG

TIP31BG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 3A TO220AB

17472000

NJVMJD32CT4G

NJVMJD32CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A DPAK

0

MJE344G

MJE344G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 200V 500MA TO225AA

1504

MJD42CT4G

MJD42CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A DPAK

14182

MJD210T4G

MJD210T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 5A DPAK

461

CPH3144-TL-E

CPH3144-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 2A CPH3

0

MMBT6521LT1G

MMBT6521LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 100MA SOT23-3

2147483647

MMBTA13LT3G

MMBTA13LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 300MA SOT23-3

2147483647

NSS40301MZ4T3G

NSS40301MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A SOT-223

3664

2N4403TFR

2N4403TFR

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 600MA TO92-3

1361

BC817-40LT3G

BC817-40LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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