Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BDV65BG

BDV65BG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 10A TO247

273

KSA1013YBU

KSA1013YBU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1A TO92-3

58690000

BUT11A

BUT11A

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 5A TO-220

8762400

MMBT5551LT3G

MMBT5551LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 600MA SOT23-3

75

SPZT2907AT1G

SPZT2907AT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 0.6A SOT223

668

MPS751-D26Z

MPS751-D26Z

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 2A TO92-3

1276

FSB749

FSB749

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 3A SSOT3

2013

NSV12100XV6T1G

NSV12100XV6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 1A SOT563

0

NSS12200LT1G

NSS12200LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 2A SOT23-3

229

MMBT5089LT1G

MMBT5089LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 50MA SOT23-3

0

2SC3648T-TD-E

2SC3648T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 700MA PCP

2861

BC548BTA

BC548BTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA TO92-3

5484

BCW68GLT1G

BCW68GLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 800MA SOT23-3

6289

BC549BTA

BC549BTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA TO92-3

7654

KSC945YTA

KSC945YTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 150MA TO92-3

13

MMBT2907AM3T5G

MMBT2907AM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA SOT723

198148000

BC63916-D74Z

BC63916-D74Z

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A TO-92

0

NSS1C200MZ4T3G

NSS1C200MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A SOT-223

0

BD435G

BD435G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 32V 4A TO-225AA

25500

MCH3144-TL-E

MCH3144-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 2A MCPH3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top