Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC6096-TD-H

2SC6096-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A PCP

7839

MJ15016G

MJ15016G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 15A TO204

107400

SMMJT350T3G

SMMJT350T3G

Sanyo Semiconductor/ON Semiconductor

BIP S0T223 PNP 0.5A 300V

0

MMJT350T1G

MMJT350T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 0.5A SOT-223

90198000

KSA940TU

KSA940TU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 1.5A TO-220

520

BD244CG

BD244CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A TO220AB

1270

2SB1215T-H

2SB1215T-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A TP

0

2N3055AG

2N3055AG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 15A TO204

233

BD679AS

BD679AS

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 4A TO126-3

907914000

MMBT5087LT1G

MMBT5087LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 50MA SOT23-3

56475

FJD3305H1TM

FJD3305H1TM

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 4A DPAK

2814

KSD1408YTU

KSD1408YTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 4A TO-220F

260437000

SBC817-40LT1G

SBC817-40LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

173965

SBC847AWT1G

SBC847AWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SC70-3

1471936000

NSVBC857BTT1G

NSVBC857BTT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.1A SC75

0

2SB1205T-TL-E

2SB1205T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 20V 5A TP-FA

13300

MJD32T4G

MJD32T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 3A DPAK

5962500

SMMBT2369ALT1G

SMMBT2369ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 0.2A SOT23

692660000

2N4918G

2N4918G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 1A TO225AA

9086500

MMBT4403M3T5G

MMBT4403M3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 600MA SOT723

2147483647

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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