Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJ21195G

MJ21195G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO204

1091800

MJD122RLG

MJD122RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A DPAK

0

BC847CWT1G

BC847CWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SC70-3

1419

BD244A

BD244A

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 6A TO-220

111810800

2N6286G

2N6286G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 20A TO204

216800

BD241CG

BD241CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A TO220AB

1873

TIP110TU

TIP110TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 2A TO220-3

193000

MJE180G

MJE180G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A TO225AA

68140500

NSS40201LT1G

NSS40201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 2A SOT23-3

0

CPH3223-TL-E

CPH3223-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 3A 3CPH

299054000

NSS30071MR6T1G

NSS30071MR6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 700MA SC74

2147483647

2SA1943OTU

2SA1943OTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 17A TO264

6603375

KSA1013YTA

KSA1013YTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1A TO92-3

1425960000

2SA2210-1E

2SA2210-1E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 20A

9

2SD1816T-TL-H

2SD1816T-TL-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 4A TP-FA

140

NJW0302G

NJW0302G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 15A TO3P-3L

27014550

BD244CTU

BD244CTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A TO-220

184

NZT751

NZT751

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 4A SOT223-4

406

MJL21193G

MJL21193G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO264

2116

KSC2383OTA

KSC2383OTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1A TO92-3

796

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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