Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
TIP48G

TIP48G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 1A TO220AB

7893900

SPZT651T1G

SPZT651T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 2A SOT223-4

0

2SA1774T1G

2SA1774T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 100MA SC75 SOT416

2147483647

CPH6223-TL-E

CPH6223-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 3A CPH6

21726000

2N6517CTA

2N6517CTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 500MA TO92-3

3993

SS8050CBU

SS8050CBU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 1.5A TO92-3

3381

2SC5707-E

2SC5707-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 8A TP

1002

MMBT3906WT1G

MMBT3906WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 200MA SC70-3

0

KSH41CTF

KSH41CTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A DPAK

0

NJVMJD6039T4G

NJVMJD6039T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 4A DPAK

5000

SBCP56T3G

SBCP56T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT-223

1155232000

KSA1156YS

KSA1156YS

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 400V 0.5A TO-126

1085

SBC856BWT1G

SBC856BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 0.1A SOT-323

10924

MSD1819A-RT1G

MSD1819A-RT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 100MA SC70-3

2147483647

TIP106G

TIP106G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 8A TO220AB

6804000

SMMBT3906WT1G

SMMBT3906WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 0.2A SC70

20621

KSC5603DTU

KSC5603DTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 800V 3A TO220-3

7530

TIP32G

TIP32G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 3A TO220AB

2231

MJD44H11RLG

MJD44H11RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 8A DPAK

3792

SBC848BLT1G

SBC848BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23

2147483647

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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