Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
TIP3055G

TIP3055G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 15A TO247

4381410

MMBTA63LT1G

MMBTA63LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 30V 500MA SOT23-3

207801

2SA2013-TD-E

2SA2013-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 4A PCP

433

SNSS30201MR6T1G

SNSS30201MR6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 2A TSOP-6

0

BC547CTFR

BC547CTFR

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA TO92-3

1005

KSP44TA

KSP44TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 300MA TO92-3

779

SS8550CBU

SS8550CBU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 1.5A TO92-3

9894

FJP5027OTU

FJP5027OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 800V 3A TO-220

0

MJD50TF

MJD50TF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 1A DPAK

350

BD787G

BD787G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 4A TO225AA

135425000

2SD1801S-E

2SD1801S-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 2A TP

172846500

KSE44H11

KSE44H11

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 10A TO220-3

3600

PN2907ATAR

PN2907ATAR

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 800MA TO92-3

8231

CPH3116-TL-E

CPH3116-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 1A 3CPH

1779

MJB45H11T4G

MJB45H11T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 10A D2PAK

39

2SD1624S-TD-E

2SD1624S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 3A PCP

268328000

NST3904F3T5G

NST3904F3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SOT1123

2147483647

BC850BLT1G

BC850BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

8185

2N6035G

2N6035G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 60V 4A TO-225AA

43

MJD200RLG

MJD200RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 5A DPAK

142923400

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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