Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJB41CT4G

MJB41CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A D2PAK

0

BC847CLT3G

BC847CLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A SOT-23

1921160000

PZT2222AT1G

PZT2222AT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT223

4255

PZT751T1G

PZT751T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 2A SOT223

0

KSD880YTU

KSD880YTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A TO-220

375

2SC3647T-TD-E

2SC3647T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A PCP

1369

BD675AG

BD675AG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 45V 4A TO225AA

1556

PZTA42T1G

PZTA42T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 0.5A SOT223

3134

2SD1815S-TL-E

2SD1815S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A TPFA

444

BD243CG

BD243CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A TO220AB

817

NJD1718T4G

NJD1718T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A DPAK

1232

MMBT4401LT3G

MMBT4401LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT23-3

39753

NZT605

NZT605

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 110V 1.5A SOT-223

6238

SMMBT3904TT1G

SMMBT3904TT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SC75 SOT416

484

2SD1624S-TD-H

2SD1624S-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 3A PCP

19907000

NZT560

NZT560

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A SOT-223

78712000

2SB1205T-E

2SB1205T-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 20V 5A TP

95519000

MMBT4403LT3G

MMBT4403LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 600MA SOT23-3

21809

NJVMJD44H11RLG-VF01

NJVMJD44H11RLG-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 8A DPAK-4

0

NSS12200WT1G

NSS12200WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 2A SC88/SC70-6

300024000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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