Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
S2SA1774G

S2SA1774G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 0.1A SC75-3

193

MMBT3906LT1G

MMBT3906LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 200MA SOT23-3

0

TIP32AG

TIP32AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 3A TO220AB

3600

NZT560A

NZT560A

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A SOT-223

243120000

MJD112T4G

MJD112T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 2A DPAK

0

NSS60600MZ4T3G

NSS60600MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 6A SOT-223

0

MMBT2484LT3G

MMBT2484LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 0.1A SOT23

53670

2SD1623T-TD-E

2SD1623T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 2A PCP

955

MMBTA55LT1G

MMBTA55LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 500MA SOT23-3

8873

TIP41BG

TIP41BG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 6A TO220AB

1024

MJD122-1G

MJD122-1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A DPAK

0

BC846BLT3G

BC846BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SOT23-3

2147483647

NSVBC847BLT3G

NSVBC847BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

4554

NJW0281G

NJW0281G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 15A TO3P-3L

209

KSC2073TU

KSC2073TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 150V 1.5A TO220-3

2028

TIP42AG

TIP42AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 6A TO220AB

227210050

FJV992FMTF

FJV992FMTF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 50MA SOT23-3

2147483647

SBC817-25LT1G

SBC817-25LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

43

MJD243T4G

MJD243T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 4A DPAK

0

2SD1803S-TL-E

2SD1803S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TPFA

6397700

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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