Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SD1628G-TD-H

2SD1628G-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 5A PCP

180111000

BSR16

BSR16

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 800MA SOT23-3

34535

TIP147FTU

TIP147FTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 10A TO3PF

3101080

TIP31G

TIP31G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A TO220AB

29941850

MJD47G

MJD47G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 1A DPAK

43

MMBT6429LT1G

MMBT6429LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 200MA SOT23-3

147

2N3906TF

2N3906TF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 200MA TO92-3

0

MMBTA42LT3G

MMBTA42LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA SOT23-3

321

NJVMJD243T4G

NJVMJD243T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 4A DPAK-4

5000

KSB596YTU

KSB596YTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 4A TO220-3

11041000

KSC3265YMTF

KSC3265YMTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 800MA SOT23-3

7505

BD139G

BD139G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1.5A TO225AA

2462

CPH3105-TL-E

CPH3105-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A 3CPH

75654000

NJVMJD31CG

NJVMJD31CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A DPAK-4

1195

MJF44H11G

MJF44H11G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 10A TO220FP

255

SS8550DTA

SS8550DTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 1.5A TO92-3

0

KSP92BU

KSP92BU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 500MA TO92-3

1320

BCW66GLT1G

BCW66GLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA SOT23-3

30264

MJD122G

MJD122G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A DPAK

0

BC557BTF

BC557BTF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA TO92-3

1342

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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