Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847ALT1G

BC847ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

582

2SC5242OTU

2SC5242OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 17A TO-3P

5393

BCW68GLT3G

BCW68GLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 800MA SOT23-3

17468

MJD6039T4G

MJD6039T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 4A DPAK

25767500

BSP52T3G

BSP52T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 1A SOT-223

0

SMMBT3906LT3G

SMMBT3906LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 0.2A SOT-23

2147483647

KSC2223YMTF

KSC2223YMTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 20MA SOT23-3

766612000

NSS1C300ET4G

NSS1C300ET4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A 3DPAK

426722500

MJ11028G

MJ11028G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 50A TO3

1717800

2SA2169-E

2SA2169-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 10A TP

83314000

2SA2202-TD-E

2SA2202-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A PCP

2000

KSP2907ABU

KSP2907ABU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA TO92-3

423

NSS40501UW3T2G

NSS40501UW3T2G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 5A 3-WDFN

103818000

MJW21196G

MJW21196G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 16A TO247

240

SBCX19LT1G

SBCX19LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.5A SOT23

11814

2N3904TA

2N3904TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA TO92-3

0

2N5885G

2N5885G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 25A TO204

186

BDW46G

BDW46G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 15A TO-220AB

622

2SA1593T-E

2SA1593T-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A TP

9709000

BC557ATA

BC557ATA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA TO92-3

1293

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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