Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NST846BF3T5G

NST846BF3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SOT1123

2147483647

BC858CLT3G

BC858CLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 100MA SOT23-3

2147483647

BUL45D2G

BUL45D2G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 5A TO-220AB

7

NSVBC858CLT1G

NSVBC858CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 0.1A SOT23-3

680433000

NSVMMBTA05LT1G

NSVMMBTA05LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V SOT23

11812

BCP68T1G

BCP68T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 1A SOT223

0

2SD1801S-TL-E

2SD1801S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 2A TPFA

2491

SBC807-25LT3G

SBC807-25LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.5A SOT-23

2147483647

NZT651

NZT651

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 4A SOT223-4

3875

MJW18020G

MJW18020G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 30A TO-247

0

BCX17LT1G

BCX17LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

6123

2SB1123S-TD-E

2SB1123S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A PCP

3819

MJD31CRLG

MJD31CRLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A DPAK

4658

MSB92ASWT1G

MSB92ASWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 500MA SC70-3

9

BC857BWT1G

BC857BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SC70-3

767

BF720T1G

BF720T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 100MA SOT223

7432

NZT45H8

NZT45H8

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 8A SOT223-4

1084

NSS20201LT1G

NSS20201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 2A SOT23-3

22084

SMMBTA56WT3G

SMMBTA56WT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 0.5A SC70-3

0

NJVMJD2955T4G

NJVMJD2955T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 10A DPAK

1317

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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