Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NSS60200LT1G

NSS60200LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 2A SOT23-3

602

KSC2073H2TU

KSC2073H2TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 150V 1.5A TO220-3

9742000

MJD2955T4G

MJD2955T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 10A DPAK

21532500

KSA992FBTA

KSA992FBTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 0.05A TO92-3

2147483647

MMBTA56LT1G-HFE

MMBTA56LT1G-HFE

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 0.5A SOT23

126000

NJVMJD112G

NJVMJD112G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 2A DPAK-4

0

BC807-40LT1G

BC807-40LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

47137

SMMBT3904LT1G

SMMBT3904LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SOT23-3

3456

NJVMJD45H11D3T4G

NJVMJD45H11D3T4G

Sanyo Semiconductor/ON Semiconductor

IC TRANS PNP 80V 8A DPAK-3

0

2SA2153-TD-E

2SA2153-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A PCP

2159

TIP42G

TIP42G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 6A TO220AB

7345050

2SC5964-TD-E

2SC5964-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 3A PCP

4318

BCP56-10T3G

BCP56-10T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT-223

389844000

2SB1124S-TD-H

2SB1124S-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A PCP

0

NJVMJD45H11T4G-VF01

NJVMJD45H11T4G-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 8A DPAK-4

441932500

2SA1552T-TL-E

2SA1552T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A TP-FA

2862100

BD179G

BD179G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 3A TO225AA

1904

2N4401TAR

2N4401TAR

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA TO92-3

11588

2N3906TFR

2N3906TFR

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 0.2A TO-92

8000

SMMBT6427LT1G

SMMBT6427LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 40V 500MA SOT23-3

9020

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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