Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC63916-D27Z

BC63916-D27Z

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A TO-92

0

NJVMJD31CRLG

NJVMJD31CRLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A DPAK-4

5400

SPZT2222AT1G

SPZT2222AT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 0.6A SOT223

958

2SB1215S-TL-E

2SB1215S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A TPFA

1277

BC848BLT3G

BC848BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23-3

2147483647

MJW21193G

MJW21193G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO247

116

BDX33CG

BDX33CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 10A TO220AB

85000

BCV26

BCV26

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 30V 1.2A SOT-23

19737

2N6488G

2N6488G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 15A TO220AB

0

FSB660A

FSB660A

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 2A 3SSOT

18341

MMBT2222ATT3G

MMBT2222ATT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SC75 SOT416

6812

NSVT489AMT1G

NSVT489AMT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 2A TSOP-6

5163

NSV40201LT1G

NSV40201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 2A SOT-23-3

7715

NSM6056MT1G

NSM6056MT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN Z DIODE 40V 600MA SC74

0

15C02MH-TL-E

15C02MH-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 1A MCPH3

102000

SMBT35200MT1G

SMBT35200MT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 35V 2A 6TSOP

0

BC847CWT3G

BC847CWT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A SOT-323

6865

50C02CH-TL-E

50C02CH-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 500MA 3CPH

5910

MSD42T1G

MSD42T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 150MA SC59

1125369000

BD138G

BD138G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 1.5A TO225AA

35617000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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