Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N6292G

2N6292G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 70V 7A TO220AB

14324150

PZTA96ST1G

PZTA96ST1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 450V 500MA SOT223

332

FJA13009TU

FJA13009TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 12A TO-3P

20213500

NSVMMBT5551M3T5G

NSVMMBT5551M3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 0.06A SOT-723

32000

NSS30100LT1G

NSS30100LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 1A SOT23-3

5197

MJE15035G

MJE15035G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 350V 4A TO220AB

108

SMMBTA14LT1G

SMMBTA14LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 300MA SOT23-3

9621

MJD31CT4G

MJD31CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A DPAK

27411

2SB1201S-TL-E

2SB1201S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A TP-FA

267859500

NZT660

NZT660

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 3A SOT223-4

564

KSD880O

KSD880O

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A TO220-3

1636

2SB1122S-TD-E

2SB1122S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 1A PCP

34627000

2N4921G

2N4921G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 1A TO225AA

2845500

KSH32CTF

KSH32CTF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A DPAK

0

TIP125G

TIP125G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 60V 5A TO220AB

8175

NSS40600CF8T1G

NSS40600CF8T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 6A CHIPFET

29906000

BC856BLT3G

BC856BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 100MA SOT23-3

50621

NJV4031NT1G

NJV4031NT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A SOT223

221

12A02MH-TL-E

12A02MH-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 1A MCPH3

7990

MMBT2907ALT1G

MMBT2907ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA SOT23-3

38811

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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