Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJE18004G

MJE18004G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 5A TO220AB

2561950

PCP1103-TD-H

PCP1103-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 1.5A PCP

2968

MMBT5401WT1G

MMBT5401WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 500MA SC70-3

352696000

BC33725TA

BC33725TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA TO92-3

12690

BC848ALT1G

BC848ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23-3

2147483647

BC548CTA

BC548CTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA TO92-3

0

BC846ALT3G

BC846ALT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SOT23-3

34570

NJW1302G

NJW1302G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 15A TO3P-3L

5760

FZT649

FZT649

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 3A SOT223-4

56584000

BC547CBU

BC547CBU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA TO92-3

801

MMBT2907ALT3G

MMBT2907ALT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA SOT23-3

13765

BD242BG

BD242BG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 3A TO220AB

78912000

NJL0281DG

NJL0281DG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 260V 15A TO-264

151400

BC848CLT1G

BC848CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23-3

12198

MSB1218A-RT1G

MSB1218A-RT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SC70-3

2147483647

SBC856BLT1G

SBC856BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 0.1A SOT-23

2060

MSB92WT1G

MSB92WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 500MA SC70-3

2147483647

KSB1015YTU

KSB1015YTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 3A TO-220F

14105000

BC556BTF

BC556BTF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 100MA TO92-3

947

MJD45H11-1G

MJD45H11-1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 8A IPAK

125

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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