Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N5195G

2N5195G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 4A TO225AA

19567500

TIP142TTU

TIP142TTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 10A TO220-3

43324000

NJVMJD128T4G

NJVMJD128T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 120V 8A DPAK-4

511

BC33725TFR

BC33725TFR

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA TO92-3

3013

2SC4027S-H

2SC4027S-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A TP

2932000

MJD31T4G

MJD31T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A DPAK

32332500

2SB1122T-TD-E

2SB1122T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 1A PCP

52747000

BC817-16LT1G

BC817-16LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

5985

NSV20201LT1G

NSV20201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 2A SOT-23-3

29689000

2SC4134S-TL-E

2SC4134S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 1A TPFA

84914700

BC33825TA

BC33825TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 800MA TO92-3

730320000

2SA1416T-TD-E

2SA1416T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 1A PCP

1817

2N3442G

2N3442G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 140V 10A TO204

2981200

MJ15025G

MJ15025G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO204

32116200

BDX53CG

BDX53CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A TO220AB

23606850

NSS1C201MZ4T3G

NSS1C201MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A SOT223

522

BC858BWT1G

BC858BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 100MA SC70-3

2360

FSB560A

FSB560A

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 2A SSOT-3

74807

PZT2907AT3G

PZT2907AT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 0.6A SOT223

5763

BC857BLT1G

BC857BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SOT23-3

194739

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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