Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJW21194G

MJW21194G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 16A TO247

0

2SB1216S-E

2SB1216S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 4A TP

96612000

TIP117G

TIP117G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 2A TO220AB

0

BUX85G

BUX85G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 2A TO220AB

279

MJD44E3T4G

MJD44E3T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 10A DPAK

36081

MMBT100A

MMBT100A

Sanyo Semiconductor/ON Semiconductor

DIE TRANS NPN 45V GENERAL PURP

0

KSC5502DTTU

KSC5502DTTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 600V 2A TO-220

495927000

NJVMJD44H11D3T4G

NJVMJD44H11D3T4G

Sanyo Semiconductor/ON Semiconductor

IC TRANS NPN 80V 8A DPAK-3

0

SBC847CWT3G

SBC847CWT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A

0

MJE181G

MJE181G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A TO225AA

11593000

FJI5603DTU

FJI5603DTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 800V 3A I2PAK

321

BC856BM3T5G

BC856BM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 100MA SOT723

9

TIP29BG

TIP29BG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A TO220AB

172415750

TIP147TU

TIP147TU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 10A TO-3P

81

PZTA29

PZTA29

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 0.8A SOT223

94204000

2N4403BU

2N4403BU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 600MA TO92-3

4834

2N4922G

2N4922G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 1A TO225AA

0

2SC3649S-TD-H

2SC3649S-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A PCP

111779000

BC818-40LT1G

BC818-40LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 500MA SOT23-3

5632

KSC1008CYTA

KSC1008CYTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 700MA TO92-3

877

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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