Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NSVBCP69T1G

NSVBCP69T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 20V 1A SOT223

49856

SBC807-25LT1G

SBC807-25LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.5A SOT-23

2147483647

BD14016S

BD14016S

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A TO126-3

1131

KSP42BU

KSP42BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 0.5A TO-92

20000

NSVBC858BLT1G

NSVBC858BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 100MA SOT23-3

17836

TIP35CG

TIP35CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 25A TO247

0

MJE170G

MJE170G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 3A TO225AA

124115500

FJP13007H1TU-F080

FJP13007H1TU-F080

Sanyo Semiconductor/ON Semiconductor

TO220 HV FAST-SWITCHING NPN PWR

16233000

2N6387G

2N6387G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 10A TO220AB

7074500

BUV22G

BUV22G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 40A TO-3

10600

2SB1203S-E

2SB1203S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 5A TP

16554000

BC807-25LT3G

BC807-25LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

26970

FJPF5021OTU

FJPF5021OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 500V 5A TO220F

241

2SD1060R-1E

2SD1060R-1E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A

14750

BC636TA

BC636TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 1A TO92-3

1208320000

MJE5850G

MJE5850G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 8A TO220AB

331750

15C01M-TL-E

15C01M-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 700MA 3MCP

1156836000

MJE3439G

MJE3439G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 350V 300MA TO225AA

16643000

BC548BU

BC548BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA TO92-3

1189020000

SBC817-40LT3G

SBC817-40LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

5623

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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