Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SD1060R-1EX

2SD1060R-1EX

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A

0

BCP53-10T1G

BCP53-10T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

1605099000

MMBT5088LT1G

MMBT5088LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 50MA SOT23-3

34873

MMBT6428LT1G

MMBT6428LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 200MA SOT23-3

62392

SBC847BWT1G

SBC847BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SC88/SC70-6

6250

BD135TG

BD135TG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 1.5A TO225

97110000

MJE5742G

MJE5742G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 400V 8A TO220AB

1322

MJF32CG

MJF32CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A TO-220FP

70

NJVNJD2873T4G-VF01

NJVNJD2873T4G-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 2A DPAK

109460000

NSV60601MZ4T3G

NSV60601MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 6A SOT-223-4

3578

CPH3212-TL-E

CPH3212-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A 3CPH

2629

MCH3209-TL-E

MCH3209-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 3A MCPH3

220115000

KSP13TA

KSP13TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 500MA TO92-3

0

TIP141G

TIP141G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 10A TO247-3

1671320

BC516-D27Z

BC516-D27Z

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 30V 1A TO-92

2374

NJW21193G

NJW21193G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO-3P

16

FSB560

FSB560

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 2A 3SSOT

300012000

2N6517BU

2N6517BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 350V 500MA TO92-3

414670000

BD679AG

BD679AG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 4A TO225AA

472

MJD44H11T4G

MJD44H11T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 8A DPAK

1618

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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