Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BSS63LT1G

BSS63LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 100MA SOT23-3

103

TIP31CG

TIP31CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A TO220AB

779

BD244BG

BD244BG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 6A TO220AB

1193300

KSD1616AGTA

KSD1616AGTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 1A TO92-3

4013

TIP112G

TIP112G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 2A TO220AB

107

MMBTA13LT1G

MMBTA13LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 300MA SOT23-3

1600

2N5551BU

2N5551BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 600MA TO92-3

2155

MJL21195G

MJL21195G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 16A TO264

86425

NSVBC857BLT3G

NSVBC857BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

20000

FJT44KTF

FJT44KTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 300MA SOT223-4

16463

MMBT5401LT1G

MMBT5401LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 500MA SOT23-3

0

SMSD1819A-RT1G

SMSD1819A-RT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 0.1A SC70-3

0

NJW44H11G

NJW44H11G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 10A TO3P-3L

821140

MMBT4124LT1G

MMBT4124LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 200MA SOT23-3

2147483647

FJX992TF

FJX992TF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 100MA SC70

3726

MJE270G

MJE270G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 2A TO225AA

7658000

2SC5569-TD-E

2SC5569-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 7A SOT89/PCP-1

0

BC847BTT1G

BC847BTT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SC75 SOT416

3609

SMMBT3904WT1G

SMMBT3904WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SC70-3

14566

FJP3305H1TU

FJP3305H1TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 4A TO220-3

764150000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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