Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJD41CT4G

MJD41CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A DPAK

6191

2N6038G

2N6038G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 4A TO225AA

8377000

2SA1419T-TD-E

2SA1419T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A PCP

1745

BDW94CFTU

BDW94CFTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 12A TO-220

0

2N5684G

2N5684G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 50A TO3

25

SFT1202-TL-E

SFT1202-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 150V 2A TPFA

104739200

PCP1203-TD-H

PCP1203-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 1.5A PCP

194129000

BC846BWT1G

BC846BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SC70-3

15423

BSR17A

BSR17A

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SOT23-3

3142

MJD243G

MJD243G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 4A DPAK

16975

NSVBC846BM3T5G

NSVBC846BM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 0.1A SOT-723

14368

PN2907ABU

PN2907ABU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 800MA TO92-3

9784

MJE182G

MJE182G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 3A TO225AA

165197000

2N6043G

2N6043G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 8A TO220AB

3945650

NSVBC817-16LT1G

NSVBC817-16LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.5A SOT23

23462

MMBT589LT1G

MMBT589LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 1A SOT23-3

41435

MJE15033G

MJE15033G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 8A TO220AB

313

BCW66GLT3G

BCW66GLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA SOT23-3

1299990000

2SB1204T-E

2SB1204T-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 8A TP

346923000

BC33740TA

BC33740TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA TO92-3

48

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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