Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SA1418T-TD-E

2SA1418T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 0.7A 160V

988

BD140G

BD140G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A TO225AA

56216000

BD13916S

BD13916S

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1.5A TO-126

1981

SMMBT3904LT3G

SMMBT3904LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA SOT23-3

21934

NJVMJD42CRLG

NJVMJD42CRLG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A DPAK-4

48600

BC857BLT3G

BC857BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SOT23-3

2147483647

SBCW72LT1G

SBCW72LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A SOT-23

81000

NJD35N04T4G

NJD35N04T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 350V 4A DPAK

0

2SB1204T-TL-E

2SB1204T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 8A TPFA

18954900

BD234G

BD234G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 2A TO225AA

14286500

NSVBCP53-16T3G

NSVBCP53-16T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

0

MJ4502G

MJ4502G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 30A TO204

136

15C02CH-TL-E

15C02CH-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 1A 3CPH

755339000

2N3771G

2N3771G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 30A TO204

508

NJVMJD45H11G

NJVMJD45H11G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 8A DPAK-4

3952175

MMBT4401LT1G

MMBT4401LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT23-3

0

KSB1017YTU

KSB1017YTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 4A TO220F

5805000

30C02MH-TL-E

30C02MH-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 700MA MCPH3

455769000

SMMBT4401LT1G

SMMBT4401LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT23-3

1093948000

50C02SS-TL-E

50C02SS-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 400MA SSFP

1242380000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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