Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NSS60600MZ4T1G

NSS60600MZ4T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 6A SOT-223

0

SMMBTA42LT1G

SMMBTA42LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA SOT23-3

0

MMBT4403LT1G

MMBT4403LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 600MA SOT23-3

0

KSA473YTU

KSA473YTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 3A TO-220

11117000

2N5551TF

2N5551TF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 600MA TO92-3

611

MMBTA56LT1G

MMBTA56LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 500MA SOT23-3

43954

2N5190G

2N5190G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 4A TO-225AA

5661500

MJD200G

MJD200G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 5A DPAK

332418000

2SC5200OTU

2SC5200OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 17A TO264

0

MJE210G

MJE210G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 5A TO225AA

8277

MJD32CRLG

MJD32CRLG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A DPAK

1542

KSC3503DS

KSC3503DS

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 0.1A TO-126

44000

PN2907ATF

PN2907ATF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 800MA TO92-3

22032

NSV40200UW6T1G

NSV40200UW6T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 2A 6WDFN

0

SBCP56T1G

SBCP56T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT-223

5195

BCW65ALT1G

BCW65ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 32V 800MA SOT23-3

1011824000

KSP2907ACTA

KSP2907ACTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA TO92-3

2147483647

BC817-16LT3G

BC817-16LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

2147483647

SBC817-16LT3G

SBC817-16LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.5A SOT-23

8014

NJD35N04G

NJD35N04G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 350V 4A DPAK

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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