Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BD809G

BD809G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 10A TO220AB

1651800

KSA992FATA

KSA992FATA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 0.05A TO92-3

0

2SC6094-TD-E

2SC6094-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A PCP

18413000

MJD2955RLG

MJD2955RLG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 10A DPAK

0

NSV1C300ET4G

NSV1C300ET4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A DPAK

0

NJVNJD35N04G

NJVNJD35N04G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 350V 4A DPAK-4

0

KSC5338D

KSC5338D

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 5A TO220-3

872

BCW65CLT1G

BCW65CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 32V 800MA SOT23-3

310057000

TIP29AG

TIP29AG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 1A TO220AB

245

KSA928AYTA

KSA928AYTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 2A TO92-3

1531112000

KSA916YTA

KSA916YTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 120V 800MA TO92-3

111248000

2SD1805F-TL-E

2SD1805F-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 20V 5A TPFA

183836400

MCH3145-TL-E

MCH3145-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A MCPH3

503830000

2SA1552S-H

2SA1552S-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A TP

16

KSC2328AYBU

KSC2328AYBU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 2A TO92-3

169784000

NSVBC850CLT1G

NSVBC850CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN BIPOLAR 45V SOT23-3

42000

KSA1381ESTU

KSA1381ESTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 0.1A TO-126

2590

MJF15031G

MJF15031G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 8A TO220FP

25587900

TIP116G

TIP116G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 2A TO220AB

4553000

2SC6099-TL-E

2SC6099-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A TPFA

951

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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