Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N6490G

2N6490G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 15A TO-220AB

13100

BD681G

BD681G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 4A TO225AA

3

SBC857CLT1G

SBC857CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

331

2SB815-6-TB-E

2SB815-6-TB-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 15V 700MA 3CP

522960000

TIP42BG

TIP42BG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 6A TO220AB

484

NSV60600MZ4T3G

NSV60600MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 6A SOT223-4

0

2SA2040-E

2SA2040-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 8A TP

96419500

BC857CLT3G

BC857CLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SOT23-3

2147483647

2SD1815S-TL-H

2SD1815S-TL-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A TP-FA

0

MJE3055TG

MJE3055TG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 10A TO220AB

568

TIP33CG

TIP33CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 10A TO247

250

BC807-25WT1G

BC807-25WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SC70-3

23307

MSA1162GT1G

MSA1162GT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 100MA SC59

280924000

NJT4030PT1G

NJT4030PT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 3A SOT-223

24

2SB1124T-TD-E

2SB1124T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A PCP

1874

MMBTA56WT1G

MMBTA56WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 500MA SC70-3

34783

BD437TG

BD437TG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 4A TO-225AA

3

BD237G

BD237G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 2A TO225AA

11496000

PZTA64

PZTA64

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 30V 1.2A SOT223-4

4007

BDW42G

BDW42G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 15A TO220AB

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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