Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NJL1302DG

NJL1302DG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DIODE 260V 15A TO264

0

BD242CG

BD242CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A TO220AB

566

MJD45H11T4G

MJD45H11T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 8A DPAK

76240000

TIP126G

TIP126G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 5A TO220AB

303

2N3906TA

2N3906TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 200MA TO92-3

16000

TIP41CG

TIP41CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A TO220AB

2277

SS8050DBU

SS8050DBU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 25V 1.5A TO92-3

7013

MJH11020G

MJH11020G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 200V 15A TO247

145

2SB1204S-E

2SB1204S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 8A TP

9941000

NSVBCX17LT1G

NSVBCX17LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 0.5A SOT23

299099000

TIP36AG

TIP36AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 25A TO247

262360

2N6667G

2N6667G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 60V 10A TO220AB

806250

2N6052G

2N6052G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 12A TO204

0

SMMBTA06LT3G

SMMBTA06LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 0.5A SOT-23

1889

BC546BTF

BC546BTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA TO92-3

242

MJD41CRLG

MJD41CRLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 6A DPAK

64865400

TIP50G

TIP50G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 1A TO220AB

2472

2N3773G

2N3773G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 140V 16A TO204

527

MJE703G

MJE703G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 4A TO225AA

12303000

NSV1C300ET4G-VF01

NSV1C300ET4G-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A 3DPAK

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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