Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
SBCP56-16T1G

SBCP56-16T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT223

2147483647

2SC4027S-E

2SC4027S-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A TP

900

KSA1281YTA

KSA1281YTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 2A TO92-3

2147483647

2N6520TA

2N6520TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 350V 500MA TO92-3

0

SBC846BLT1G

SBC846BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SOT23-3

2147483647

MJE371G

MJE371G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 4A TO225AA

1624000

MJE803G

MJE803G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 4A TO225AA

15184000

MCH6121-TL-H

MCH6121-TL-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 3A MCPH6

0

BCW32LT1G

BCW32LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 32V 100MA SOT23-3

41234000

KSC5402DTF

KSC5402DTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 525V 2A TO252AA

655912000

NSVBSS63LT1G

NSVBSS63LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 100MA SOT23-3

2970

NSVMMBT3906TT1G

NSVMMBT3906TT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP BIPO 40V SC75-3

350183000

SBC847CLT1G

SBC847CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

234

NS2029M3T5G

NS2029M3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 100MA SOT723

2147483647

2SA2012-TD-E

2SA2012-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 5A PCP

3090

BD682G

BD682G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 4A TO225AA

1046

SMMBT5401LT1G

SMMBT5401LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 500MA SOT23-3

93

BUB323ZG

BUB323ZG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 350V 10A D2PAK

3373400

MJF15030G

MJF15030G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 150V 8A TO220FP

0

BC807-16LT1G

BC807-16LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

3986

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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