Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMBT3904LT3G

MMBT3904LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 0.2A SOT23

152936

2N4403TF

2N4403TF

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 600MA TO92-3

5265

2SA2222SG

2SA2222SG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 10A TO-220ML

7559

NST848BF3T5G

NST848BF3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT1123

2147483647

NSVBC850BLT1G

NSVBC850BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN BIPOLAR 45V SOT23-3

0

MJF2955G

MJF2955G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 90V 10A TO-220FP

262850

BC847BWT1G

BC847BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SC70-3

16566

FJA4313OTU

FJA4313OTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 17A TO3P

447

NSVMMBT2222ATT1G

NSVMMBT2222ATT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SC75 SOT416

2147483647

2SD1048-7-TB-E

2SD1048-7-TB-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 700MA 3CP

345530000

MJD210G

MJD210G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 5A DPAK

51210050

BC32725BU

BC32725BU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 800MA TO92-3

600

NJVMJD127T4G

NJVMJD127T4G

Sanyo Semiconductor/ON Semiconductor

IC TRANS PNP 8A 100V DPAK

4003

MJ11016G

MJ11016G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 120V 30A TO204

171

MMBTA06WT1G

MMBTA06WT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 500MA SC70-3

413117000

TIP100G

TIP100G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 8A TO220AB

4776700

MPSA29

MPSA29

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 0.8A TO-92

0

FJV42MTF

FJV42MTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 350V 0.5A SOT-23

62126000

PN2222TF

PN2222TF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 600MA TO92-3

496834000

BC81725MTF

BC81725MTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top