Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
NSS40300MZ4T3G

NSS40300MZ4T3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 3A SOT-223

35

NSVMMBT2222AM3T5G

NSVMMBT2222AM3T5G

Sanyo Semiconductor/ON Semiconductor

SS SOT-723 GP TRANSISTOR

1214

2N5884G

2N5884G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 25A TO204

85

TIP147TTU

TIP147TTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 10A TO220-3

0

BDX53BG

BDX53BG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 8A TO-220AB

315950

SBC847BLT1G

SBC847BLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

2147483647

MCH6101-TL-E

MCH6101-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 15V 1.5A 6MCPH

207936000

BD676AG

BD676AG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 45V 4A TO225AA

875

SBC857ALT1G

SBC857ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SOT23-3

5114

MJD42CRLG

MJD42CRLG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A DPAK

275

BC857BTT1G

BC857BTT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SC75 SOT416

15134

NSVMMBT2907AWT1G

NSVMMBT2907AWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 600MA SC70-3

5030

BD678G

BD678G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 60V 4A TO225

0

50A02CH-TL-E

50A02CH-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 500MA 3CPH

14558

MJD42CG

MJD42CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 6A DPAK

94575

MJE15031G

MJE15031G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 8A TO220AB

675

NSS60201LT1G

NSS60201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 2A SOT23-3

578

MJF31CG

MJF31CG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 3A TO-220FP

1241000

2SC4135S-E

2SC4135S-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A TP

30916500

TIP126TU

TIP126TU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 80V 5A TO220-3

965

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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