Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SA2039-H

2SA2039-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 5A TP

25518000

MJD47T4G

MJD47T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 1A DPAK

25

2SC4027T-H

2SC4027T-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A TP

226310000

BUT11AFTU

BUT11AFTU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 450V 5A TO-220F

7692000

MJ11012G

MJ11012G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 30A TO204

75200

BC32740BU

BC32740BU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 800MA TO92-3

10010

2SA1419T-TD-H

2SA1419T-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A PCP

10996000

BDX34CG

BDX34CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 10A TO-220AB

1286

NSS1C200LT1G

NSS1C200LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 2A SOT-23

132660000

TIP120TU

TIP120TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 5A TO220-3

7778

TIP107G

TIP107G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 8A TO220AB

0

BD137G

BD137G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 1.5A TO-225AA

161335500

MJD148T4G

MJD148T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 4A DPAK

3580

ECH8102-TL-H

ECH8102-TL-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 30V 12A ECH8

222818000

MJ15024G

MJ15024G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 16A TO204

63

NJT4031NT3G

NJT4031NT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A SOT223

294520000

2SC4135S-TL-E

2SC4135S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A TPFA

10801400

KSC5502DTM

KSC5502DTM

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 600V 2A TO252AA

12355

KSC945CYTA

KSC945CYTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 150MA TO92-3

5168

MCH6202-TL-E

MCH6202-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 1.5A 6MCPH

65945000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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