Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SA2029M3T5G

2SA2029M3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 100MA SOT723

2147483647

KSP92TA

KSP92TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 500MA TO92-3

2147483647

MJL21194G

MJL21194G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 250V 16A TO264

3889

MJH11022G

MJH11022G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 250V 15A TO247

0

2SD1618S-TD-E

2SD1618S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 15V 0.7A SOT89-3

0

NSM80101MT1G

NSM80101MT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 0.5A SC74-6

914144000

MJD253-1G

MJD253-1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 4A IPAK

816

FMBM5401

FMBM5401

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 150V 0.6A SSOT-6

342872000

NSV60601MZ4T1G

NSV60601MZ4T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 6A SOT-223-4

612

NST3906F3T5G

NST3906F3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 40V 200MA SOT1123

17566

NSVBC848CLT1G

NSVBC848CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 100MA SOT23-3

13061

MJD340RLG

MJD340RLG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA DPAK

87512600

2SB1124S-TD-E

2SB1124S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A PCP

279

SS8550CTA

SS8550CTA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 25V 1.5A TO92-3

8220

2SC6097-TL-E

2SC6097-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 3A TPFA

623

MJD32CT4G

MJD32CT4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A DPAK

5037

FJD5553TM

FJD5553TM

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 3A DPAK

283

2N5686G

2N5686G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 50A TO3

76500

MMBT100

MMBT100

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.5A SOT-23

157918

SBC807-40LT3G

SBC807-40LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

22033

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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