Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJB45H11G

MJB45H11G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 10A D2PAK

16750

2SC5658RM3T5G

2SC5658RM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 100MA SOT723

27632000

MJD340T4G

MJD340T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA DPAK

170

2SA1552S-E

2SA1552S-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 1.5A TP

15794500

BC33740BU

BC33740BU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 800MA TO92-3

0

SBC817-25LT3G

SBC817-25LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 500MA SOT23-3

180230000

BC847BLT3G

BC847BLT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 100MA SOT23-3

61393

2SC4027T-TL-E

2SC4027T-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A TP-FA

106924500

2N3904TFR

2N3904TFR

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 200MA TO92-3

0

TIP2955G

TIP2955G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 15A TO247

1266

PZTA92T1G

PZTA92T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 500MA SOT223

0

2N5886G

2N5886G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 25A TO3

868

BC846ALT1G

BC846ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 100MA SOT23-3

154385

MJD32CG

MJD32CG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 3A DPAK

112514325

NJVMJD31T4G

NJVMJD31T4G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 3A DPAK

0

D45VH10G

D45VH10G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 15A TO220AB

109

BSR14

BSR14

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 800MA SOT23-3

2147483647

NSVBC848BWT1G

NSVBC848BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 30V 0.1A SOT-323

87000

SBCW66GLT1G

SBCW66GLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

2147483647

SBC807-40LT1G

SBC807-40LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 500MA SOT23-3

18527

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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