Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SA1900T100Q

2SA1900T100Q

ROHM Semiconductor

TRANS PNP 50V 1A SO-89

0

2SD2118TLR

2SD2118TLR

ROHM Semiconductor

TRANS NPN 20V 5A SOT-428

0

2SA1579U3T106S

2SA1579U3T106S

ROHM Semiconductor

2SA1579U3 IS A TRANSISTOR FOR HI

1190

MMST4124T146

MMST4124T146

ROHM Semiconductor

TRANS NPN 25V 0.2A SOT-346 SMT3

0

2SB1694T106

2SB1694T106

ROHM Semiconductor

TRANS PNP 30V 1A SOT-323

12741

2SD2701TL

2SD2701TL

ROHM Semiconductor

TRANS NPN 12V 2A TUMT3

3253

US6X5TR

US6X5TR

ROHM Semiconductor

TRANS NPN 12V 2A TUMT6

0

2SC4617TLR

2SC4617TLR

ROHM Semiconductor

TRANS NPN 50V 0.15A SOT-416

2858

2SA2119KT146

2SA2119KT146

ROHM Semiconductor

TRANS PNP 12V 0.5A SMT3

635

2SD2657KT146

2SD2657KT146

ROHM Semiconductor

TRANS NPN 30V 1.5A SOT-346

423

2SCR552P5T100

2SCR552P5T100

ROHM Semiconductor

NPN 30V 3A MEDIUM POWER TRANSIST

26653

2SA1576UBTLR

2SA1576UBTLR

ROHM Semiconductor

TRANS PNP 50V 0.15A UMT3F

3148

2SD1766T100Q

2SD1766T100Q

ROHM Semiconductor

TRANS NPN 32V 2A SOT-89

0

2SD1781KFRAT146R

2SD1781KFRAT146R

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

2393

2SC4061KT146N

2SC4061KT146N

ROHM Semiconductor

TRANS NPN 300V 0.1A SOT-346

2222

2SB1732TL

2SB1732TL

ROHM Semiconductor

TRANS PNP 12V 1.5A TUMT3

2245

SSTA13T116

SSTA13T116

ROHM Semiconductor

TRANS NPN 30V 0.3A SST3

0

2SCR512PFRAT100

2SCR512PFRAT100

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

899

2SD1781KT146Q

2SD1781KT146Q

ROHM Semiconductor

TRANS NPN 32V 0.8A SOT-346

770

2SD2679T100

2SD2679T100

ROHM Semiconductor

TRANS NPN 30V 2A MPT3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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