Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SAR340PT100Q

2SAR340PT100Q

ROHM Semiconductor

PNP -100MA -400V MIDDLE POWER TR

1488

2SC4617EBHZGTLQ

2SC4617EBHZGTLQ

ROHM Semiconductor

2SC4617EBHZG IS BIPOLAR TRANSIST

276

BCX53-16T100

BCX53-16T100

ROHM Semiconductor

TRANS PNP MPT3

0

2SA2029T2LR

2SA2029T2LR

ROHM Semiconductor

TRANS PNP 50V 0.15A VMT3

471

SSTA06HZGT116

SSTA06HZGT116

ROHM Semiconductor

NPN GENERAL PURPOSE TRANSISTOR

2830

SST3906HZGT116

SST3906HZGT116

ROHM Semiconductor

PNP GENERAL PURPOSE TRANSISTOR

1985

2SD2700TL

2SD2700TL

ROHM Semiconductor

TRANS NPN 12V 2A TUMT3

2891

2SA1797T100P

2SA1797T100P

ROHM Semiconductor

TRANS PNP 50V 2A SOT-89

5

2SC5001TLR

2SC5001TLR

ROHM Semiconductor

TRANS NPN 20V 10A SOT-428

3652

2SAR514P5T100

2SAR514P5T100

ROHM Semiconductor

PNP -80V -0.7A MEDIUM POWER TRAN

1625

2SCR523UBTL

2SCR523UBTL

ROHM Semiconductor

TRANS NPN 50V 0.1A UMT3F

11306

2SAR293P5T100

2SAR293P5T100

ROHM Semiconductor

PNP MIDDLE POWER DRIVER TRANSIST

65

QSX1TR

QSX1TR

ROHM Semiconductor

TRANS NPN 12V 6A TSMT6

0

2SA1037AKT146S

2SA1037AKT146S

ROHM Semiconductor

TRANS PNP 50V 0.15A SMT3 TR

2575

2SCR574DGTL

2SCR574DGTL

ROHM Semiconductor

TRANS NPN 80V 2A

0

BCX70KT216

BCX70KT216

ROHM Semiconductor

TRANS NPN 45V 0.2A SST3

0

BCX56-16T100

BCX56-16T100

ROHM Semiconductor

TRANS NPN 80V 1A MPT3

0

2SB1386T100Q

2SB1386T100Q

ROHM Semiconductor

TRANS PNP 20V 5A SOT-89

3393

2SD1760TLR

2SD1760TLR

ROHM Semiconductor

TRANS NPN 50V 3A SOT-428

0

2SCR346PT100P

2SCR346PT100P

ROHM Semiconductor

NPN 100MA 400V MIDDLE POWER TRAN

544

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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