Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SD1733TLQ

2SD1733TLQ

ROHM Semiconductor

TRANS NPN 80V 1A SOT-428

0

2SD2351T106W

2SD2351T106W

ROHM Semiconductor

TRANS NPN 50V 0.15A SOT-323

14

QSX4TR

QSX4TR

ROHM Semiconductor

TRANS NPN 30V 2A TSMT6

0

2SC4083T106N

2SC4083T106N

ROHM Semiconductor

TRANS NPN 11V 0.05A SOT-323

32641

2SD1760TLP

2SD1760TLP

ROHM Semiconductor

TRANS NPN 50V 3A SOT-428

0

2SA1579U3T106

2SA1579U3T106

ROHM Semiconductor

2SA1579U3 IS A TRANSISTOR FOR HI

491

2SA2072TLQ

2SA2072TLQ

ROHM Semiconductor

TRANS PNP 60V 3A CPT

0

2SA2090TLQ

2SA2090TLQ

ROHM Semiconductor

TRANS PNP 60V 0.5A TSMD3

0

2SB1697T100

2SB1697T100

ROHM Semiconductor

TRANS PNP 12V 2A MPT3

735

2SD2656T106

2SD2656T106

ROHM Semiconductor

TRANS NPN 30V 1A SOT-323

3468

2SCR552PT100

2SCR552PT100

ROHM Semiconductor

TRANS NPN 30V 3A MPT3

477

UMT4403U3HZGT106

UMT4403U3HZGT106

ROHM Semiconductor

PNP MEDIUM POWER TRANSISTOR FOR

2990

BC847BT116

BC847BT116

ROHM Semiconductor

TRANS NPN 45V 0.1A SST3

473

2SB1695TL

2SB1695TL

ROHM Semiconductor

TRANS PNP 30V 1.5A TSMT 3

3232

2SD2653KT146

2SD2653KT146

ROHM Semiconductor

TRANS NPN 12V 2A SOT-346

3181

BCX71HT116

BCX71HT116

ROHM Semiconductor

TRANS PNP 45V 0.2A SST3

0

2SCR554PFRAT100

2SCR554PFRAT100

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

1275

2SC4082T106P

2SC4082T106P

ROHM Semiconductor

TRANS NPN 20V 0.05A SOT-323

1901

2SB1690TL

2SB1690TL

ROHM Semiconductor

TRANS PNP 12V 2A TSMT 3

2642

BCW61CT116

BCW61CT116

ROHM Semiconductor

TRANS PNP 32V 0.2A SST3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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