Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SAR522MT2L

2SAR522MT2L

ROHM Semiconductor

TRANS PNP 20V 0.2A VMT3

6718

2SC5001TLQ

2SC5001TLQ

ROHM Semiconductor

TRANS NPN 20V 10A SOT-428

1725

2SD1949T106Q

2SD1949T106Q

ROHM Semiconductor

TRANS NPN 50V 0.5A SOT-323

2983

2SC4132T100R

2SC4132T100R

ROHM Semiconductor

TRANS NPN 120V 2A SOT-89

0

US6X4TR

US6X4TR

ROHM Semiconductor

TRANS NPN 30V 2A TUMT6

0

2SC4102T106R

2SC4102T106R

ROHM Semiconductor

TRANS NPN 120V 0.05A SOT-323

10303

2SAR512PFRAT100

2SAR512PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

875

2SD2211T100R

2SD2211T100R

ROHM Semiconductor

TRANS NPN 160V 1.5A SOT89

0

2SA1774EBTLR

2SA1774EBTLR

ROHM Semiconductor

TRANS PNP 50V 0.15A EMT3F

40

2SCR562F3TR

2SCR562F3TR

ROHM Semiconductor

NPN DRIVER TRANSISTOR

2905

UML2NTR

UML2NTR

ROHM Semiconductor

TRANS NPN 50V 0.15A SOT353

2992

2SD1898T100P

2SD1898T100P

ROHM Semiconductor

TRANS NPN 80V 1A SOT-89

0

BCX71HT216

BCX71HT216

ROHM Semiconductor

TRANS PNP 45V 0.2A SST3

0

2SD1767T100Q

2SD1767T100Q

ROHM Semiconductor

TRANS NPN 80V 0.7A SOT-89

1164

2SAR544PT100

2SAR544PT100

ROHM Semiconductor

TRANS PNP 80V 2.5A SOT-89

995

2SCR514RTL

2SCR514RTL

ROHM Semiconductor

TRANS NPN 80V 0.7A TSMT3

67

SST2222AT116

SST2222AT116

ROHM Semiconductor

TRANS NPN 40V 0.6A SST3

17937

SST4401HZGT116

SST4401HZGT116

ROHM Semiconductor

NPN MEDIUM POWER TRANSISTOR (SWI

2321

2SB1198KT146Q

2SB1198KT146Q

ROHM Semiconductor

TRANS PNP 80V 0.5A SOT-346

3583

2SB1424T100Q

2SB1424T100Q

ROHM Semiconductor

TRANS PNP 20V 3A SOT-89

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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